Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103326
Title: Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation
Authors: Yu, Xuechao
Shen, Youde
Liu, Tao
Wu, Tao (Tom)
Wang, Qi Jie
Issue Date: 2015
Source: Yu, X., Shen, Y., Liu, T., Wu, T., & Wang, Q. J. (2015). Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation. Scientific Reports, 5, 12014-.
Series/Report no.: Scientific Reports
Abstract: Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.
URI: https://hdl.handle.net/10356/103326
http://hdl.handle.net/10220/38734
ISSN: 2045-2322
DOI: http://dx.doi.org/10.1038/srep12014
Rights: This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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