Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103352
Title: Developing seedless growth of ZnO micro/nanowire arrays towards ZnO/FeS2/CuI P-I-N photodiode application
Authors: Shukla, Sudhanshu
Yang, Zhi
Wang, Minqiang
Zhu, Yue
Deng, Jianping
Ge, Hu
Wang, Xingzhi
Xiong, Qihua
Issue Date: 2015
Source: Yang, Z., Wang, M., Shukla, S., Zhu, Y., Deng, J., Ge, H., et al. (2015). Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application. Scientific Reports, 5, 11377-.
Series/Report no.: Scientific Reports
Abstract: A seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications.
URI: https://hdl.handle.net/10356/103352
http://hdl.handle.net/10220/38748
ISSN: 2045-2322
DOI: 10.1038/srep11377
Rights: This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
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