dc.contributor.authorZhang, Le
dc.contributor.authorChang, Chip-Hong
dc.contributor.authorKong, Zhi Hui
dc.contributor.authorLiu, Chao Qun
dc.date.accessioned2015-10-01T08:49:27Z
dc.date.available2015-10-01T08:49:27Z
dc.date.copyright2015en_US
dc.date.issued2015
dc.identifier.citationZhang, L., Chang, C.-H., Kong, Z. H., & Liu, C. Q. (2015). Statistical Analysis and Design of 6T SRAM Cell For Physical Unclonable Function with Dual Application Modes. 2015 IEEE International Symposium on Circuits and Systems (ISCAS).en_US
dc.identifier.urihttp://hdl.handle.net/10220/38778
dc.description.abstractApart from performance and power efficiency, security is another critical concern in the modern memory sub-system design. SRAM, which is routinely used as a data preservation component, has now been developed into an effective primitive known as Physical Unclonable Function (PUF) for cryptographic key generation to protect the sensitive local information. Considering the constraints of hardware resource on the embedded systems, it is highly desirable to have an SRAM used both as a regular memory and a PUF to save the overheads of having these two functions implemented independently on different memory chips. Unfortunately, while process variations are the entropy sources for secure key generation, it impacts failure rates in memory accesses. This paper presents a statistical analysis on SRAM and provides an insight into how the SRAM cell geometry can be optimized to qualify it for both modes of operation simultaneously - a feasibility that has not been conceived before in the literature.en_US
dc.language.isoenen_US
dc.rights© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/ISCAS.2015.7168907].en_US
dc.subjectElectrical and Electronic Engineering
dc.titleStatistical analysis and design of 6T SRAM cell for physical unclonable function with dual application modesen_US
dc.typeConference Paper
dc.contributor.conference2015 IEEE International Symposium on Circuits and Systems (ISCAS)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/ISCAS.2015.7168907
dc.description.versionAccepted versionen_US
dc.identifier.rims183016


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