Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/81343
Title: The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction
Authors: Zheng, K.
Sun, Xiao Wei
Teo, K. L.
Keywords: Heterojunction
Interface
Filament
Resistive switching
Intrinsic defects
Issue Date: 2013
Source: Zheng, K., Sun, X. W., & Teo, K. L. (2013). The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction. Nanoscience and Nanotechnology Letters, 5(8), 868-871.
Series/Report no.: Nanoscience and Nanotechnology Letters
Abstract: We report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn junction interface and modify the interface barrier, forming or rupturing the filamentary paths between n-GaO x and p-NiO x , leading to the switching between Ohmic and diode characteristics of the device.
URI: https://hdl.handle.net/10356/81343
http://hdl.handle.net/10220/39214
ISSN: 1941-4900
DOI: http://dx.doi.org/10.1166/nnl.2013.1626
Rights: © 2013 American Scientific Publishers.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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