The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction
Sun, Xiao Wei
Teo, K. L.
Date of Issue2013-08-01
School of Electrical and Electronic Engineering
We report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn junction interface and modify the interface barrier, forming or rupturing the filamentary paths between n-GaO x and p-NiO x , leading to the switching between Ohmic and diode characteristics of the device.
Nanoscience and Nanotechnology Letters
© 2013 American Scientific Publishers.