Theoretical Analysis of Non-ablative Laser Texturing of Silicon Surface with a Continuous Wave Fiber Laser
Date of Issue2015-03-03
School of Mechanical and Aerospace Engineering
Singapore Institute of Manufacturing Technology
Si is highly transparent to infrared fiber laser (λ=1090 nm) and the laser is not regarded as a suitable tool for ablation based silicon surface texturing. However, we have shown non-ablative texturing of Si surface is possible provided that suitable laser power and dwell time are chosen to produce peak surface temperature above the Si effective oxidation point of 1250 K and below the Si melting point of 1690 K. The phenomenon is explained through theoretical thermal analysis. The Kirchhoff transform is used to include the temperature dependent thermal conductivity. It is shown that with carefully adjusting laser parameters localized oxidation occurs and results in the formation of regularly patterned micro-bumps.
Non-ablative micro/nano texturing
Journal of Laser Micro/Nanoengineering
© 2015 Japan Laser Processing Society (JLPS). This paper was published in Journal of Laser Micro/Nanoengineering and is made available as an electronic reprint (preprint) with permission of Japan Laser Processing Society (JLPS). The published version is available at: [http://dx.doi.org/10.2961/jlmn.2015.02.0014]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.