dc.contributor.authorLi, H. K.
dc.contributor.authorChen, T. P.
dc.contributor.authorHu, S. G.
dc.contributor.authorLiu, P.
dc.contributor.authorLiu, Y.
dc.contributor.authorLee, P. S.
dc.contributor.authorWang, X. P.
dc.contributor.authorLi, H. Y.
dc.contributor.authorLo, G. Q.
dc.date.accessioned2016-01-04T06:24:24Z
dc.date.available2016-01-04T06:24:24Z
dc.date.issued2015
dc.identifier.citationLi, H. K., Chen, T. P., Hu, S. G., Liu, P., Liu, Y., Lee, P. S., et al. (2015). Study of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopy. IEEE Transactions on Electron Devices, 62(8), 2684-2688.en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10220/39539
dc.description.abstractMultilevel high resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high resistance states. It is shown that the high resistance states can be described with an equivalent circuit consisting of the major components Rs, R, and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance and capacitance of the leakage gap between the TiON layer and the residual conductive filament, respectively. These components show a strong dependence on the stop voltage, which can be explained in the framework of oxygen vacancy model and conductive filament concept. On the other hand, R is observed to decrease with DC bias, which can be attributed to the barrier lowering effect of the Coulombic trap well in the Poole-Frenkel emission model.en_US
dc.format.extent5 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE Transactions on Electron Devicesen_US
dc.rights© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/TED.2015.2445339].en_US
dc.subjectImpedance spectroscopyen_US
dc.subjectMultilevel high-resistance states
dc.subjectResistive switching random access memory (RRAM)
dc.titleStudy of Multilevel High-Resistance States in HfOx-Based Resistive Switching Random Access Memory by Impedance Spectroscopyen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/TED.2015.2445339
dc.description.versionAccepted versionen_US


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