dc.contributor.authorSingh, Nandan
dc.contributor.authorHo, Charles Kin Fai
dc.contributor.authorTina, Guo Xin
dc.contributor.authorMohan, Manoj Kumar Chandra
dc.contributor.authorLee, Kenneth Eng Kian
dc.contributor.authorWang, Hong
dc.contributor.authorLam, Huy Quoc
dc.date.accessioned2016-01-05T08:28:23Z
dc.date.available2016-01-05T08:28:23Z
dc.date.issued2015
dc.identifier.citationSingh, N., Ho, C. K. F., Tina, G. X., Mohan, M. K. C., Lee, K. E. K., Wang, H., et al. (2015). MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System. Journal of Nanomaterials, 2015, 436851-.en_US
dc.identifier.issn1687-4110en_US
dc.identifier.urihttp://hdl.handle.net/10220/39575
dc.description.abstractWe report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrication is completed with standard processing techniques with BCB passivation. DC and RF measurements are carried out using a single mode fiber at 1.55 μm. For a 24-μm-diameter device (with diode ideality factor of 1.34), the dark current is 32.5 nA and the 3-dB bandwidth is ≫20 GHz at a reverse bias of 5 V, which are comparable to the theoretical values. High photocurrent of over 150.0 mA from larger diameter (>60 μm) devices is obtained. The maximum DC responsivity at 1.55 μm wavelength is O.51 A/W without antireflection coating. These photodiodes play a key role in the progress of the future THz communication systems.
dc.format.extent6 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of Nanomaterialsen_US
dc.rights© 2015 Nandan Singh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.en_US
dc.subjectAntireflection coatings
dc.subjectDevice fabrications
dc.titleMOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP Systemen_US
dc.typeJournal Article
dc.contributor.researchTemasek Laboratoriesen_US
dc.identifier.doihttp://dx.doi.org/10.1155/2015/436851
dc.description.versionPublished versionen_US


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