Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations
Jia, Bo Wen
Tan, Kian Hua
Loke, Wan Khai
Yoon, Soon Fatt
Date of Issue2015
School of Electrical and Electronic Engineering
We report a fully relaxed low threading dislocation density InSb layer grown on a GaAs substrate using self-assembled periodic interfacial misfit dislocations. The InSb layer was grown at 310°C by molecular beam epitaxy. The AFM measurement exhibited a root mean square (r.m.s.) roughness of 1.1 nm. ω-2θ scan results from x-ray diffraction measurement indicated that the InSb layer is 98.9% relaxed. Images from the transmission electron microscope measurement showed a threading dislocation density of 1.38×108 cm-2. The formation of highly uniform interfacial misfit dislocation array was also observed and the separation of dislocations is consistent with theoretical calculation. The InSb layer exhibited a 33,840 cm2/V s room temperature electron mobility.
© 2015 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Materials Letters, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.matlet.2015.05.123].