dc.contributor.authorJia, Bo Wen
dc.contributor.authorTan, Kian Hua
dc.contributor.authorLoke, Wan Khai
dc.contributor.authorWicaksono, Satrio
dc.contributor.authorYoon, Soon Fatt
dc.identifier.citationJia, W. B., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2015). Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations. Materials Letters, 158, 258-261.en_US
dc.description.abstractWe report a fully relaxed low threading dislocation density InSb layer grown on a GaAs substrate using self-assembled periodic interfacial misfit dislocations. The InSb layer was grown at 310°C by molecular beam epitaxy. The AFM measurement exhibited a root mean square (r.m.s.) roughness of 1.1 nm. ω-2θ scan results from x-ray diffraction measurement indicated that the InSb layer is 98.9% relaxed. Images from the transmission electron microscope measurement showed a threading dislocation density of 1.38×108 cm-2. The formation of highly uniform interfacial misfit dislocation array was also observed and the separation of dislocations is consistent with theoretical calculation. The InSb layer exhibited a 33,840 cm2/V s room temperature electron mobility.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.format.extent8 p.en_US
dc.relation.ispartofseriesMaterials Lettersen_US
dc.rights© 2015 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Materials Letters, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.matlet.2015.05.123].en_US
dc.subjectEpitaxial Growth
dc.titleEpitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocationsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionAccepted versionen_US

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