Optical bandgap widening and phase transformation of nitrogen doped cupric oxide
Wong, Ten It
Dalapati, Goutam Kumar
Date of Issue2015-12-08
School of Electrical and Electronic Engineering
The structural and optical properties of sputter deposited nitrogen (N) doped CuO (CuO(N)) thin films are systematically investigated. It is found that the incorporation of N into CuO causes an enlargement of optical bandgap and reduction in resistivity of the CuO(N) films. Furthermore, a gradual phase transformation from CuO to Cu2O is observed with the increase in N concentration. The effects of annealing temperature on the structural properties of CuO (N) and its dependence on N concentration are also investigated. It is observed that the phase transformation process from CuO to Cu2O significantly depends on the N concentration and the annealing temperature. Heterojunction solar cells of p-type CuO(N) on n-type silicon (Si) substrate, p-CuO(N)/n-Si, are fabricated to investigate the impact of N doping on its photovoltaic properties.
Copper; Doping; Photonic bandgap materials; Sputter deposition; Metallic thin films
Journal of Applied Physics
© 2015 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The published version is available at: [http://dx.doi.org/10.1063/1.4936318]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.