dc.contributor.authorMeng, Qian Qian
dc.contributor.authorWang, Hong
dc.contributor.authorLiu, Chong Yang
dc.contributor.authorAng, Kian Siong
dc.contributor.authorGuo, Xin
dc.contributor.authorGao, Bo
dc.contributor.authorTian, Yang
dc.contributor.authorManoj Kumar, Chandra Mohan
dc.contributor.authorGao, Jianjun
dc.date.accessioned2016-01-12T07:59:03Z
dc.date.available2016-01-12T07:59:03Z
dc.date.issued2014
dc.identifier.citationMeng, Q. Q., Wang, H., Liu, C. Y., Ang, K. S., Guo, X., Gao, B., et al. (2014). High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure. IEEE Photonics Technology Letters, 26(19), 1952-1955.en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://hdl.handle.net/10220/39678
dc.description.abstractInP-based unitraveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure to achieve high photocurrent as well as wide bandwidth are demonstrated in this letter. The dipole-doped layers in combination with a 22-nm-thick undoped InGaAs setback layer were employed at the InGaAs/InP absorption and collection interface to reduce the current blocking effect. A high photocurrent of 160 mA with 1.9 GHz 3-dB bandwidth from a 70-(mu ) m-diameter top-illuminated UTC-PD is achieved. A large 3-dB bandwidth of 62.5 GHz, extracted using an equivalent circuit model, has also been obtained from a 12-(mu ) m-diameter UTC-PD device. The results demonstrate that the dipole-doping can serve as an effective alternative to the quaternary InGaAsP layer at InGaAs/InP interface for InP-based UTC-PD to suppress the current blocking and reduce the complexity in epilayers growth and device fabrication.en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.format.extent4 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE Photonics Technology Lettersen_US
dc.rights© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/LPT.2014.2343260].en_US
dc.subjectDipole-doped layer; high speed; photocurrent; uni-traveling-carrier photodiodes (UTC-PDs); 3-dB bandwidthen_US
dc.titleHigh-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structureen_US
dc.typeJournal Article
dc.contributor.researchTemasek Laboratoriesen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/LPT.2014.2343260
dc.description.versionAccepted versionen_US


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