Gallium-Doped Tin Oxide Nano-Cuboids for Improved Dye Sensitized Solar Cell
Teh, Jun Jie
Ting, Siong Luong
Leong, Kam Chew
Date of Issue2013-10-14
School of Chemical and Biomedical Engineering
Tin dioxide (SnO2) is a potential candidate to replace conventional titanium dioxide (TiO2) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO2 suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge recombination). Herein, we demonstrate that gallium (Ga) doping can increase the band edge of SnO2, and we show that DSSCs using a Ga-doped SnO2 nano-cuboids based photoanode offer improved open circuit potential (∼0.74 V), fill factor (∼73.7%), and power conversion efficiency (∼4.05%).
dye sensitized solar cell; tin oxide; gallium doping; nano-cuboid; band edge; charge recombination
ACS Applied Materials & Interfaces
© 2013 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ACS Applied Materials & Interfaces, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/am403640s].