dc.contributor.authorLi, Zhipeng
dc.contributor.authorGuo, Xiao
dc.contributor.authorLu, Hui-Bin
dc.contributor.authorZhang, Zaoli
dc.contributor.authorSong, Dongsheng
dc.contributor.authorCheng, Shaobo
dc.contributor.authorBosman, Michel
dc.contributor.authorZhu, Jing
dc.contributor.authorDong, Zhili
dc.contributor.authorZhu, Weiguang
dc.date.accessioned2016-02-03T03:08:40Z
dc.date.available2016-02-03T03:08:40Z
dc.date.issued2014
dc.identifier.citationLi, Z., Guo, X., Lu, H. B., Zhang, Z., Song, D., Cheng, S., Bosman, M., Zhu, J., Dong, Z.,& Zhu, W. (2014). An Epitaxial Ferroelectric Tunnel Junction on Silicon. Advanced Materials, 26(42), 7185-7189.en_US
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://hdl.handle.net/10220/39930
dc.description.abstractEpitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.language.isoenen_US
dc.relation.ispartofseriesAdvanced Materialsen_US
dc.rights© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.subjectFerroelectric tunnel junctionen_US
dc.subjectNon-volatile memoryen_US
dc.subjectTunneling electroresistanceen_US
dc.subjectEpitaxial growthen_US
dc.subjectPulsed laser depositionen_US
dc.titleAn Epitaxial Ferroelectric Tunnel Junction on Siliconen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1002/adma.201402527


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