dc.contributor.authorFan, Zhen
dc.contributor.authorDeng, Jinyu
dc.contributor.authorWang, Jingxian
dc.contributor.authorLiu, Ziyan
dc.contributor.authorYang, Ping
dc.contributor.authorXiao, Juanxiu
dc.contributor.authorYan, Xiaobing
dc.contributor.authorDong, Zhili
dc.contributor.authorWang, John
dc.contributor.authorChen, Jingsheng
dc.date.accessioned2016-02-19T07:03:07Z
dc.date.available2016-02-19T07:03:07Z
dc.date.issued2016
dc.identifier.citationFan, Z., Deng, J., Wang, J., Liu, Z., Yang, P., Xiao, J., et al. (2016). Ferroelectricity emerging in strained (111)-textured ZrO2 thin films. Applied Physics Letters, 108(1), 012906-.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10220/40010
dc.description.abstract(Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO2thin films. Our theoretical analyses suggest that the strain imposed on the ZrO2 (111) film by the TiN/MgO (001) substrate would energetically favor the tetragonal (t) and orthorhombic (o) phases over the monoclinic (m) phase of ZrO2, and the compressive strain along certain ⟨11-2⟩ directions may further stabilize the o-phase. Experimentally ZrO2thin films are sputtered onto the MgO (001) substrates buffered by epitaxial TiN layers. ZrO2thin films exhibit t- and o-phases, which are highly (111)-textured and strained, as evidenced by X-ray diffraction and transmission electron microscopy. Both polarization-electric field (P-E) loops and corresponding current responses to voltage stimulations measured with appropriate applied fields reveal the ferroelectric sub-loop behavior of the ZrO2films at certain thicknesses, confirming that the ferroelectric o-phase has been developed in the strained (111)-textured ZrO2films. However, further increasing the applied field leads to the disappearance of ferroelectric hysteresis, the possible reasons of which are discussed.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.format.extent5 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied Physics Lettersen_US
dc.rights© 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4939660]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectFerroelectric thin films
dc.titleFerroelectricity emerging in strained (111)-textured ZrO2 thin filmsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4939660
dc.description.versionPublished versionen_US


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