A silicon-nanowire memory driven by optical gradient force induced bistability
Chin, Lip Ket
Yang, Z. C.
Gu, Y. D.
Ng, Geok Ing
Kwong, D. L.
Liu, Ai Qun
Date of Issue2015
School of Electrical and Electronic Engineering
In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.
Applied Physics Letters
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