A silicon-nanowire memory driven by optical gradient force induced bistability
Chin, Lip Ket
Yang, Z. C.
Gu, Y. D.
Ng, Geok Ing
Kwong, D. L.
Liu, Ai Qun
Date of Issue2015-12-30
School of Electrical and Electronic Engineering
In this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.
Applied Physics Letters
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