dc.contributor.authorDong, Bin
dc.contributor.authorCai, H.
dc.contributor.authorChin, Lip Ket
dc.contributor.authorHuang, Jianguo
dc.contributor.authorYang, Z. C.
dc.contributor.authorGu, Y. D.
dc.contributor.authorNg, Geok Ing
dc.contributor.authorSer, Wee
dc.contributor.authorKwong, D. L.
dc.contributor.authorLiu, Ai Qun
dc.date.accessioned2016-02-19T07:19:26Z
dc.date.available2016-02-19T07:19:26Z
dc.date.issued2015
dc.identifier.citationDong, B., Cai, H., Chin, L. K., Huang, J. G., Yang, Z. C., Gu, Y. D., et al. (2015). A silicon-nanowire memory driven by optical gradient force induced bistability. Applied Physics Letters, 107(26), 261111-.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10220/40015
dc.description.abstractIn this paper, a bistable optical-driven silicon-nanowire memory is demonstrated, which employs ring resonator to generate optical gradient force over a doubly clamped silicon-nanowire. Two stable deformation positions of a doubly clamped silicon-nanowire represent two memory states (“0” and “1”) and can be set/reset by modulating the light intensity (<3 mW) based on the optical force induced bistability. The time response of the optical-driven memory is less than 250 ns. It has applications in the fields of all optical communication, quantum computing, and optomechanical circuits.en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent5 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied Physics Lettersen_US
dc.rights© 2015 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4939114]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectOptical resonators
dc.titleA silicon-nanowire memory driven by optical gradient force induced bistabilityen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4939114
dc.description.versionPublished versionen_US


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