Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/84947
Title: Terbium-Doped VO2 Thin Films: Reduced Phase Transition Temperature and Largely Enhanced Luminous Transmittance
Authors: Wang, Ning
Duchamp, Martial
Dunin-Borkowski, Rafal E.
Liu, Shiyu
Zeng, Xianting
Cao, Xun
Long, Yi
Keywords: Vanadium dioxide
Terbium-doping
Thermochromic properties
Sol-gel
Smart windows
Issue Date: 2016
Source: Wang, N., Duchamp, M., Dunin-Borkowski, R. E., Liu, S., Zeng, X., Cao, X., et al. (2016). Terbium-Doped VO2 Thin Films: Reduced Phase Transition Temperature and Largely Enhanced Luminous Transmittance. Langmuir, 32(3), 759-764.
Series/Report no.: Langmuir
Abstract: Vanadium dioxide (VO2) is a well-known thermochromic material with large IR modulating ability, promising for energy-saving smart windows. The main drawbacks of VO2 are its high phase transition temperature (τc = 68 °C), low luminous transmission (Tlum), and weak solar modulating ability (ΔTsol). In this paper, the terbium cation (Tb3+) doping was first reported to reduce τc and increase Tlum of VO2 thin films. Compared with pristine VO2, 2 at. % doping level gives both enhanced Tlum and ΔTsol from 45.8% to 54.0% and 7.7% to 8.3%, respectively. The Tlum increases with continuous Tb3+ doping and reaches 79.4% at 6 at. % doping level, representing ∼73.4% relative increment compared with pure VO2. This has surpassed the best reported doped VO2 thin films. The enhanced thermochromic properties is meaningful for smart window applications of VO2 materials.
URI: https://hdl.handle.net/10356/84947
http://hdl.handle.net/10220/40490
ISSN: 0743-7463
DOI: http://dx.doi.org/10.1021/acs.langmuir.5b04212
Rights: © 2016 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by Langmuir, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/acs.langmuir.5b04212].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles
SIMTech Journal Articles

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