Lateral black phosphorene P–N junctions formed via chemical doping for high performance near-infrared photodetector
Wang, Qi Jie
Date of Issue2016
School of Electrical and Electronic Engineering
Black phosphorene (BP), a newly discovered elemental two-dimensional material, is attractive for optoelectronic and photonic applications because of its unique in-plane anisotropy, thickness-dependent direct bandgap and high carrier mobility. Since its discovery, black phosphorene has become an appealing candidate well-suited for polarization-resolved near- and mid-infrared optoelectronics due to its relative narrow bandgap and asymmetric structure. Here, we employ benzyl viologen (BV) as an effective electron dopant to part of the area of a (p-type) few-layer BP flake and achieve an ambient stable, in-plane P–N junction. Chemical doping with BV molecules modulates the electron density and allows acquiring a large built-in potential in this in-plane BP P–N junction, which is crucial for achieving high responsivity photodetectors and high quantum efficiency solar cells. As a demonstrative example, by illuminating it with a near-infrared laser at 1.47 µm, we observe a high responsivity up to ~180 mA/W with a rise time of 15 ms, and an external quantum efficiency of 0.75%. Our strategy for creating environmentally stable BP P–N junction paves the way to implementing high performance BP phototransistors and solar cells, which is also applicable to other 2D materials.
Few-layer black phosphorene
© 2016 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Nano Energy, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.nanoen.2016.04.030].