dc.contributor.authorD’Costa, Vijay Richard
dc.contributor.authorLoke, Wan Khai
dc.contributor.authorZhou, Qian
dc.contributor.authorYoon, Soon Fatt
dc.contributor.authorYeo, Yee-Chia
dc.date.accessioned2016-05-20T04:18:20Z
dc.date.available2016-05-20T04:18:20Z
dc.date.issued2016
dc.identifier.citationD’Costa, V. R., Loke, W. K., Zhou, Q., Yoon, S. F., & Yeo, Y.-C. (2016). InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study. Semiconductor Science and Technology, 31(3), 035022-.en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://hdl.handle.net/10220/40554
dc.description.abstractWe investigated the optical properties of disordered In0.52Ga0.48P alloys by spectroscopic ellipsometry in the far-infrared to ultraviolet energy range (0.037–5.1 eV). The alloys were grown on Ge (100) substrate by solid-source molecular beam epitaxy. The far-infrared dielectric function reveals two absorption peaks that can be attributed to InP- and GaP-like vibrational modes. The visible-UV dielectric function of In0.52Ga0.48P alloys nearly lattice-matched to Ge shows the critical points E 0, E 1, and E 2, energies of which are determined using a derivative analysis. A weak transition that can be identified as the E 1 + Δ1 critical point is revealed. The vibrational frequencies and the transition energies in In0.52Ga0.48P are lower relative to In0.49Ga0.51P lattice-matched to GaAs. The downward shifts in E 0 and phonons can be estimated using the compositional dependence of E 0 and phonons of bulk alloys.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.format.extent21 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesSemiconductor Science and Technologyen_US
dc.rights© 2016 IOP Publishing Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Semiconductor Science and Technology, IOP Publishing Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1088/0268-1242/31/3/035022].en_US
dc.subjectElectrical and Electronic Engineering
dc.subjectSemiconductor Science and Technology
dc.titleInGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry studyen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1088/0268-1242/31/3/035022
dc.description.versionAccepted versionen_US


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