On the hole accelerator for III-nitride light-emitting diodes
Demir, Hilmi Volkan
Sun, Xiao Wei
Date of Issue2016
School of Electrical and Electronic Engineering
LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays
LUMINOUS! Centre of Excellence for Semiconductor Lighting & Displays
In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1−xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1−xN layer, and the thickness for the p-GaN layer and the p-AlxGa1−xN layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-AlxGa1−xN layer increases. Meanwhile, with p-GaN layer or p-AlxGa1−xN layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-AlxGa1−xN design, and the hole accelerator can effectively increase the hole injection if properly designed.
Applied Physics Letters
© 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4947025]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.