dc.contributor.authorYang, Xuyong
dc.contributor.authorMa, Yanyan
dc.contributor.authorMutlugun, Evren
dc.contributor.authorZhao, Yongbiao
dc.contributor.authorLeck, Kheng Swee
dc.contributor.authorTan, Swee Tiam
dc.contributor.authorDemir, Hilmi Volkan
dc.contributor.authorZhang, Qinyuan
dc.contributor.authorDu, Hejun
dc.contributor.authorSun, Xiao Wei
dc.date.accessioned2016-07-12T07:30:31Z
dc.date.available2016-07-12T07:30:31Z
dc.date.issued2013
dc.identifier.citationYang, X., Ma, Y., Mutlugun, E., Zhao, Y., Leck, K. S., Tan, S. T., et al. (2014). Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers. ACS Applied Materials and Interfaces, 6(1), 495-499.en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://hdl.handle.net/10220/40918
dc.description.abstractAn efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except for the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cdm-2 at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cdA-1 and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.language.isoenen_US
dc.relation.ispartofseriesACS Applied Materials and Interfacesen_US
dc.rights© 2013 American Chemical Society.en_US
dc.subjectquantum doten_US
dc.subjectlight-emitting diodesen_US
dc.titleStable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layersen_US
dc.typeJournal Article
dc.contributor.researchLUMINOUS! Centre of Excellence for Semiconductor Lighting and Displaysen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1021/am404540z
dc.contributor.organizationLUMINOUS! Centre of Excellence for Semiconductor Lighting and Displaysen_US


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