Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85042
Title: Effects of chemical slurries on fixed abrasive chemical-mechanical polishing of optical silicon substrates
Authors: Tian, Yebing
Zhong, Zhaowei
Ng, Jun Hao
Keywords: Chemical-mechanical polishing
Fixed abrasive pad
Issue Date: 2013
Source: Tian, Y., Zhong, Z., & Ng, J. H. (2013). Effects of chemical slurries on fixed abrasive chemical-mechanical polishing of optical silicon substrates. International Journal of Precision Engineering and Manufacturing, 14(8), 1447-1454.
Series/Report no.: International Journal of Precision Engineering and Manufacturing
Abstract: Chemical mechanical polishing (CMP) with fixed abrasive pad is an alternative machining method to loose abrasive lapping and partial polishing with traditional pad in the fabrication of optical silicon substrates. However, the effects of chemical slurry on the fixed abrasive polishing performance are not fully understood. In this work, a serial of CMP experiments with a fixed abrasive pad were carried out for optical silicon substrates using seven different chemical slurries i.e. de-ionized water, alkaline lubricant, colloidal silica, hydrogen peroxide (H2O2) and potassium hydroxide (KOH). The polishing performances of these slurries were evaluated and compared in terms of material removal rate (MRR), surface roughness and flatness of the polished silicon substrates. The polishing characteristics were also discussed to reveal material removal mechanism and silicon surface generation under different chemical environments.
URI: https://hdl.handle.net/10356/85042
http://hdl.handle.net/10220/40950
ISSN: 1229-8557
DOI: http://dx.doi.org/10.1007/s12541-013-0195-7
Rights: © 2013 KSPE and Springer.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MAE Journal Articles
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