Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

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Author
Jiang, Jize
Shu, Wei
Chong, Kwen-Siong
Lin, Tong
Lwin, Ne Kyaw Zwa
Chang, Joseph Sylvester
Liu, Jingyuan
Date of Issue
2016
Conference Name
2016 IEEE International Symposium on Circuits and Systems (ISCAS)
School
School of Electrical and Electronic Engineering
Research Centre
Temasek Laboratories
Version
Accepted version
Abstract
Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended.
Subject
Leakage currents
MOSFET
Type
Conference Paper
Rights
© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/ISCAS.2016.7527156.
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http://dx.doi.org/10.1109/ISCAS.2016.7527156
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