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      Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

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      Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process.pdf (317.2Kb)
      Author
      Jiang, Jize
      Shu, Wei
      Chong, Kwen-Siong
      Lin, Tong
      Lwin, Ne Kyaw Zwa
      Chang, Joseph Sylvester
      Liu, Jingyuan
      Date of Issue
      2016
      Conference Name
      2016 IEEE International Symposium on Circuits and Systems (ISCAS)
      School
      School of Electrical and Electronic Engineering
      Research Centre
      Temasek Laboratories
      Version
      Accepted version
      Abstract
      Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended.
      Subject
      Leakage currents
      MOSFET
      Type
      Conference Paper
      Rights
      © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: http://dx.doi.org/10.1109/ISCAS.2016.7527156.
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      http://dx.doi.org/10.1109/ISCAS.2016.7527156
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