Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process
Lwin, Ne Kyaw Zwa
Chang, Joseph Sylvester
Date of Issue2016
2016 IEEE International Symposium on Circuits and Systems (ISCAS)
School of Electrical and Electronic Engineering
Although Total Ionizing Dose (TID) effects are generally unpronounced in deep-submicron-CMOS, we show the TID-induced leakage current @TID=500Krad is significant in NMOS-finger-transistors of GlobalFoundries 65nm CMOS. Further, Radiation-Hardening-By-Design techniques against said TID effect are recommended.
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