dc.contributor.authorLittlejohns, Callum G.
dc.contributor.authorDominguez Bucio, Thalia
dc.contributor.authorNedeljkovic, Milos
dc.contributor.authorWang, Hong
dc.contributor.authorMashanovich, Goran Z.
dc.contributor.authorReed, Graham T.
dc.contributor.authorGardes, Frederic Y.
dc.identifier.citationLittlejohns, C. G., Dominguez Bucio, T., Nedeljkovic, M., Wang, H., Mashanovich, G. Z., Reed, G. T., et al. (2016). Towards a fully functional integrated photonic-electronic platform via a single SiGe growth step. Scientific Reports, 6, 19425-.en_US
dc.description.abstractSilicon-germanium (Si1-xGex) has become a material of great interest to the photonics and electronics industries due to its numerous interesting properties including higher carrier mobilities than Si, a tuneable lattice constant, and a tuneable bandgap. In previous work, we have demonstrated the ability to form localised areas of single crystal, uniform composition SiGe-on-insulator. Here we present a method of simultaneously growing several areas of SiGe-on-insulator on a single wafer, with the ability to tune the composition of each localised SiGe area, whilst retaining a uniform composition in that area. We use a rapid melt growth technique that comprises of only a single Ge growth step and a single anneal step. This innovative method is key in working towards a fully integrated photonic-electronic platform, enabling the simultaneous growth of multiple compositions of device grade SiGe for electro-absorption optical modulators operating at a range of wavelengths, photodetectors, and bipolar transistors, on the same wafer. This is achieved by modifying the structural design of the SiGe strips, without the need to modify the growth conditions, and by using low cost, low thermal-budget methods.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.format.extent6 p.en_US
dc.relation.ispartofseriesScientific Reportsen_US
dc.rights© 2016 The Author(s) (Nature Publishing Group). This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en_US
dc.subjectElectronic devicesen_US
dc.subjectMaterials for opticsen_US
dc.titleTowards a fully functional integrated photonic-electronic platform via a single SiGe growth stepen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US

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