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      Direct Si-Si bonding through self-assembled monolayers

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      EEE15088.pdf (759.0Kb)
      Author
      Eow, Desmond Fu Shen
      Date of Issue
      2016
      School
      School of Electrical and Electronic Engineering
      Abstract
      Currently, the most widely used bonding method is hydrophilic bonding of oxidized surfaces, which provides high bonding strength. The presence of oxide interface leads to high resistivity and limits the practical applications of bonded wafers. Therefore, oxides-free bonding is desired. It can be realized by surface plasma bonding with fast ion beams in a vacuum chamber. However, this bonding method can result in formation of amorphous layer at the bonding interface. Direct wafer bonding through Self-assembled monolayers (SAM) is anticipated to be an enabling method for oxides-free bonding. Organic monolayers can form spontaneously on surface of substrate by adsorption and passivated the surface from oxidation. After high temperature desorption annealing, the two mating surfaces can bond by covalent bonds. [Peer Assessment Review]
      Subject
      Si–Si bonding
      Self-Assembled monolayer
      Type
      Student Research Poster
      Rights
      © 2016 The Author(s).
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