dc.contributor.authorFan, Wei Jun
dc.contributor.authorBose, Sumanta
dc.contributor.authorZhang, Dao Hua
dc.date.accessioned2017-04-17T09:15:56Z
dc.date.available2017-04-17T09:15:56Z
dc.date.issued2016
dc.identifier.citationFan, W. J., Bose, S., & Zhang, D. H. (2016). Electronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 μm optical communication systems. Journal of Applied Physics, 120(9), 093111-.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10220/42279
dc.description.abstractDilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 μm optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the effective bandgap rapidly, while significantly increasing the spin-orbit-splitting energy. Additional incorporation of dilute amounts of Nitrogen (N) helps to attain lattice matching with GaAs, while providing a route for flexible bandgap tuning. Here we present a study of the electronic bandstructure and optical gain of the lattice matched GaNxBiyAs1-x-y/GaAs quaternary alloy quantum well (QW) based on the 16-band k.p model. We have taken into consideration the interactions between the N and Bi impurity states with the host material based on the band anticrossing (BAC) and valence band anticrossing (VBAC) model. The optical gain calculation is based on the density matrix theory. We have considered different lattice matched GaNBiAs QW cases and studied their energy dispersion curves, optical gain spectrum, maximum optical gain and differential gain; and compared their performances based on these factors. The thickness and composition of these QWs were varied in order to keep the emission peak fixed at 1.55 μm. The well thickness has an effect on the spectral width of the gain curves. On the other hand, a variation in the injection carrier density has different effects on the maximum gain and differential gain of QWs of varying thicknesses. Among the cases studied, we found that the 6.3 nm thick GaN3Bi5.17As91.83 lattice matched QW was most suited for 1.55 μm (0.8 eV) GaAs-based photonic applications.en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent8 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of Applied Physicsen_US
dc.rights© 2016 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The published version is available at: [http://dx.doi.org/10.1063/1.4962214]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectOptical latticesen_US
dc.subjectElectronic bandstructureen_US
dc.titleElectronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 μm optical communication systemsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.4962214
dc.description.versionPublished versionen_US
dc.contributor.organizationOPTIMUS, Centre for OptoElectronics and Biophotonicsen_US


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