dc.contributor.authorWang, Le
dc.contributor.authorDash, Sibashisa
dc.contributor.authorChang, Lei
dc.contributor.authorYou, Lu
dc.contributor.authorFeng, Yaqing
dc.contributor.authorHe, Xu
dc.contributor.authorJin, Kui-juan
dc.contributor.authorZhou, Yang
dc.contributor.authorOng, Hock Guan
dc.contributor.authorRen, Peng
dc.contributor.authorWang, Shiwei
dc.contributor.authorChen, Lang
dc.contributor.authorWang, Junling
dc.identifier.citationWang, L., Dash, S., Chang, L., You, L., Feng, Y., He, X., et al. (2016). Oxygen Vacancy Induced Room-Temperature Metal–Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics. ACS Applied Materials & Interfaces, 8(15), 9769-9776.en_US
dc.description.abstractOxygen vacancy is intrinsically coupled with magnetic, electronic, and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by postannealing at temperature lower than 300 °C and realize the reversible metal–insulator transition in epitaxial NdNiO3 films. Importantly, over 6 orders of magnitude in the resistance modulation and a large change in optical bandgap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelate films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large magnetization of ∼50 emu/cm3 due to the formation of strongly correlated Ni2+ t2g6eg2 states. The bandgap opening is an order of magnitude larger than that of the thermally driven metal–insulator transition and continuously tunable. Potential application of the newly found insulating phase in photovoltaics has been demonstrated in the nickelate-based heterojunctions. Our discovery opens up new possibilities for strongly correlated perovskite nickelates.en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent31 p.en_US
dc.relation.ispartofseriesACS Applied Materials & Interfacesen_US
dc.rights© 2016 American Chemical Society (ACS). This is the author created version of a work that has been peer reviewed and accepted for publication by ACS Applied Materials and Interfaces, ACS. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/acsami.6b00650].en_US
dc.subjectMetal−insulator transitionen_US
dc.titleOxygen Vacancy Induced Room-Temperature Metal–Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaicsen_US
dc.typeJournal Article
dc.contributor.researchTemasek Laboratoriesen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.versionAccepted versionen_US

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