Temperature- and current-dependent spontaneous emission study on 2 μm InGaSb/AlGaAsSb quantum well lasers
Date of Issue2017
School of Electrical and Electronic Engineering
Spontaneous emission measurements, as a function of injection current and temperature, were carried out from the sidewall of a working 2 µm InGaSb/AlGaAsSb quantum well laser. The local Z power parameter was extracted to investigate the carrier recombination behaviors. A model involving the activation energy is presented to interpret the carrier loss mechanisms. Our findings show that the majority of the injected carriers recombine radiatively at low injection currents, and that Auger nonradiative recombination increases significantly with injection current. More importantly, no obvious temperature dependence of Z is observed from 20 to 80 °C.
Japanese Journal of Applied Physics
© 2017 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Japanese Journal of Applied Physics, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [https://doi.org/10.7567/JJAP.56.050310].