dc.contributor.authorHe, Yongmin
dc.contributor.authorSobhani, Ali
dc.contributor.authorLei, Sidong
dc.contributor.authorZhang, Zhuhua
dc.contributor.authorGong, Yongji
dc.contributor.authorJin, Zehua
dc.contributor.authorZhou, Wu
dc.contributor.authorYang, Yingchao
dc.contributor.authorZhang, Yuan
dc.contributor.authorWang, Xifan
dc.contributor.authorYakobson, Boris
dc.contributor.authorVajtai, Robert
dc.contributor.authorHalas, Naomi J.
dc.contributor.authorLi, Bo
dc.contributor.authorXie, Erqing
dc.contributor.authorAjayan, Pulickel
dc.identifier.citationHe, Y., Sobhani, A., Lei, S., Zhang, Z., Gong, Y., Jin, Z., et al. (2016). Layer Engineering of 2D Semiconductor Junctions. Advanced Materials, 28(25), 5126-5132.en_US
dc.description.abstractA new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p–n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses.en_US
dc.format.extent37 p.en_US
dc.relation.ispartofseriesAdvanced Materialsen_US
dc.rights© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adma.201600278].en_US
dc.subject2D semiconductor junctionsen_US
dc.subjectLayer engineeringen_US
dc.titleLayer Engineering of 2D Semiconductor Junctionsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.versionAccepted versionen_US

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