dc.contributor.authorDu, Ke-Zhao
dc.contributor.authorWang, Xingzhi
dc.contributor.authorZhang, Jun
dc.contributor.authorLiu, Xinfeng
dc.contributor.authorKloc, Christian
dc.contributor.authorXiong, Qihua
dc.date.accessioned2017-06-07T07:22:32Z
dc.date.available2017-06-07T07:22:32Z
dc.date.issued2016
dc.identifier.citationDu, K.-Z., Wang, X., Zhang, J., Liu, X., Kloc, C., & Xiong, Q. (2017). CdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emission. Optical Engineering, 56(1), 011109-.en_US
dc.identifier.issn0091-3286en_US
dc.identifier.urihttp://hdl.handle.net/10220/42607
dc.description.abstractCdS materials have shown promise in optical refrigeration. However, the current success of laser cooling is still limited to nanobelt morphology. It is, therefore, important to explore whether bulk crystal growth technology could provide high-quality materials for laser cooling studies. Herein, we have demonstrated CdS bulk crystal growth by a modified optical floating zone method. The low temperature and continuous displacement of the CdS crystalline zone have resulted in high-quality CdS bulk crystals, which show strong photoluminescence upconversion with the absence of the long-wavelength and broad emission centered ∼700 nm that commercial CdS wafers usually exhibit. All these characterizations have confirmed the excellent stoichiometric nature and crystal quality of CdS bulk crystals, which is much better than the commercial counterparts for laser cooling studies.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent5 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesOptical Engineeringen_US
dc.rights© 2016 Society of Photo-optical Instrumentation Engineers (SPIE). This paper was published in Optical Engineering and is made available as an electronic reprint (preprint) with permission of Society of Photo-optical Instrumentation Engineers (SPIE). The published version is available at: [http://dx.doi.org/10.1117/1.OE.56.1.011109]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectCdS bulk crystalen_US
dc.subjectPhotoluminescence upconversionen_US
dc.titleCdS bulk crystal growth by optical floating zone method: strong photoluminescence upconversion and minimum trapped state emissionen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1117/1.OE.56.1.011109
dc.description.versionPublished versionen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record