dc.contributor.authorSun, M.
dc.contributor.authorSavenko, I. G.
dc.contributor.authorFlayac, H.
dc.contributor.authorLiew, Timothy Chi Hin
dc.date.accessioned2017-06-13T05:08:21Z
dc.date.available2017-06-13T05:08:21Z
dc.date.issued2017
dc.identifier.citationSun, M., Savenko, I. G., Flayac, H., & Liew, T. C. H. (2017). Multivalley engineering in semiconductor microcavities. Scientific Reports, 7, 45243-.en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://hdl.handle.net/10220/42666
dc.description.abstractWe consider exciton-photon coupling in semiconductor microcavities in which separate periodic potentials have been embedded for excitons and photons. We show theoretically that this system supports degenerate ground-states appearing at non-zero inplane momenta, corresponding to multiple valleys in reciprocal space, which are further separated in polarization corresponding to a polarization-valley coupling in the system. Aside forming a basis for valleytronics, the multivalley dispersion is predicted to allow for spontaneous momentum symmetry breaking and two-mode squeezing under non-resonant and resonant excitation, respectively.en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent7 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesScientific Reportsen_US
dc.rights© 2017 The Author(s) (Nature Publishing Group). This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en_US
dc.subjectPolaritonsen_US
dc.subjectQuantum opticsen_US
dc.titleMultivalley engineering in semiconductor microcavitiesen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1038/srep45243
dc.description.versionPublished versionen_US


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