A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure
Author
Li, Hua Kai
Chen, Tu Pei
Liu, P.
Hu, S. G.
Liu, Y.
Zhang, Qing
Lee, Pooi See
Date of Issue
2016School
School of Electrical and Electronic Engineering
School of Materials Science and Engineering
School of Materials Science and Engineering
Version
Published version
Abstract
In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.
Subject
Ultraviolet light
Synapses
Synapses
Type
Journal Article
Series/Journal Title
Journal of Applied Physics
Rights
© 2016 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: [http://dx.doi.org/10.1063/1.4955042]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Collections
http://dx.doi.org/10.1063/1.4955042
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