dc.contributor.authorYadian, Boluo
dc.contributor.authorChen, Rui
dc.contributor.authorLiu, Hai
dc.contributor.authorSun, Handong
dc.contributor.authorLiu, Qing
dc.contributor.authorGan, Chee Lip
dc.contributor.authorKun, Zhou
dc.contributor.authorZhao, Chunwang
dc.contributor.authorZhu, Bin
dc.contributor.authorHuang, Yizhong
dc.date.accessioned2017-08-03T08:52:13Z
dc.date.available2017-08-03T08:52:13Z
dc.date.issued2015
dc.identifier.citationYadian, B., Chen, R., Liu, H., Sun, H., Liu, Q., Gan, C. L., et al. (2015). Significant enhancement of UV emission in ZnO nanorods subject to Ga+ ion beam irradiation. Nano Research, 8(6), 1857-1864.en_US
dc.identifier.issn1998-0124en_US
dc.identifier.urihttp://hdl.handle.net/10220/43541
dc.description.abstractApplications of ZnO nanomaterials in optoelectronics are still limited due to their insufficient photoluminescence efficiency. In order to optimize the photoluminescence properties of ZnO nanorods, the UV emission of vertically aligned ZnO nanorods grown on a Si substrate, in correlation with Ga+ ion irradiation at different ion energies (0.5 keV–16 keV), was investigated in the present study. We found that the UV intensity increased rapidly with increasing Ga+ ion energy, up to its maximum around 2 keV, at which point the intensity was approximately 50 times higher than that produced by as-grown ZnO nanorods. The gentle bombardment of low-energy Ga+ ions removes defects from ZnO nanorod surfaces. The Ga+ ions, on the other hand, implant into the nanorods, resulting in compressive strain. It is believed that the perfect arrangement of the crystal lattice upon removal of surface defects and the introduction of compressive strain are two factors that contribute to the significant enhancement of UV light generation.en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent18 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesNano Researchen_US
dc.rights© 2015 Tsinghua University Press and Springer-Verlag Berlin Heidelberg. This is the author created version of a work that has been peer reviewed and accepted for publication by Nano Research, Tsinghua University Press and Springer-Verlag Berlin Heidelberg. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1007/s12274-014-0693-7].en_US
dc.subjectZnO nanorodsen_US
dc.subjectPhotoluminescence enhancementen_US
dc.titleSignificant enhancement of UV emission in ZnO nanorods subject to Ga+ ion beam irradiationen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen_US
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1007/s12274-014-0693-7
dc.description.versionAccepted versionen_US


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