Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells
Garces, Hector F.
Goh, Teck Wee
Padture, Nitin P.
Sum, Tze Chien
Date of Issue2017
School of Physical and Mathematical Sciences
Sn-based perovskites are promising Pb-free photovoltaic materials with an ideal 1.3 eV bandgap. However, to date, Sn-based thin film perovskite solar cells have yielded relatively low power conversion efficiencies (PCEs). This is traced to their poor photophysical properties (i.e., short diffusion lengths (<30 nm) and two orders of magnitude higher defect densities) than Pb-based systems. Herein, it is revealed that melt-synthesized cesium tin iodide (CsSnI3) ingots containing high-quality large single crystal (SC) grains transcend these fundamental limitations.
Lead-free perovskite crystal
Advanced Functional Materials
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Functional Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adfm.201604818].