dc.contributor.authorWu, Bo
dc.contributor.authorZhou, Yuanyuan
dc.contributor.authorXing, Guichuan
dc.contributor.authorXu, Qiang
dc.contributor.authorGarces, Hector F.
dc.contributor.authorSolanki, Ankur
dc.contributor.authorGoh, Teck Wee
dc.contributor.authorPadture, Nitin P.
dc.contributor.authorSum, Tze Chien
dc.date.accessioned2017-08-07T03:19:20Z
dc.date.available2017-08-07T03:19:20Z
dc.date.issued2017
dc.identifier.citationWu, B., Zhou, Y., Xing, G., Xu, Q., Garces, H. F., Solanki, A., et al. (2017). Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells. Advanced Functional Materials, 27(7), 1604818-.en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://hdl.handle.net/10220/43555
dc.description.abstractSn-based perovskites are promising Pb-free photovoltaic materials with an ideal 1.3 eV bandgap. However, to date, Sn-based thin film perovskite solar cells have yielded relatively low power conversion efficiencies (PCEs). This is traced to their poor photophysical properties (i.e., short diffusion lengths (<30 nm) and two orders of magnitude higher defect densities) than Pb-based systems. Herein, it is revealed that melt-synthesized cesium tin iodide (CsSnI3) ingots containing high-quality large single crystal (SC) grains transcend these fundamental limitations.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent30 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesAdvanced Functional Materialsen_US
dc.rights© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Functional Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adfm.201604818].en_US
dc.subjectLead-free perovskite crystalen_US
dc.subjectCarrier dynamicsen_US
dc.titleLong Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cellsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1002/adfm.201604818
dc.description.versionAccepted versionen_US


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