Please use this identifier to cite or link to this item:
Title: High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics
Authors: Chow, Wai Leong
Yu, Peng
Liu, Fucai
Hong, Jinhua
Wang, Xingli
Zeng, Qingsheng
Hsu, Chuang-Han
Zhu, Chao
Zhou, Jiadong
Wang, Xiaowei
Xia, Juan
Yan, Jiaxu
Chen, Yu
Wu, Di
Yu, Ting
Shen, Zexiang
Lin, Hsin
Jin, Chuanhong
Tay, Beng Kang
Liu, Zheng
Keywords: 2D materials
Palladium diselenide
Issue Date: 2017
Source: Chow, W. L., Yu, P., Liu, F., Hong, J., Wang, X., Zeng, Q., et al. (2017). High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics. Advanced Materials, 29(21), 1602969-.
Series/Report no.: Advanced Materials
Abstract: Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (µe (max) = 216 cm2 V−1 s−1) and on/off ratio up to 103. Hole-dominated-transport PdSe2 can be obtained by molecular doping using F4-TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs.
ISSN: 0935-9648
DOI: 10.1002/adma.201602969
Rights: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.