dc.contributor.authorSuchomel, H.
dc.contributor.authorBrodbeck, S.
dc.contributor.authorLiew, Timothy Chi Hin
dc.contributor.authorAmthor, M.
dc.contributor.authorKlaas, M.
dc.contributor.authorKlembt, S.
dc.contributor.authorKamp, M.
dc.contributor.authorHöfling, S.
dc.contributor.authorSchneider, C.
dc.date.accessioned2017-10-13T03:45:38Z
dc.date.available2017-10-13T03:45:38Z
dc.date.issued2017
dc.identifier.citationSuchomel, H., Brodbeck, S., Liew, T. C. H., Amthor, M., Klaas, M., Klembt, S., et al. (2017). Prototype of a bistable polariton field-effect transistor switch. Scientific Reports, 7, 5114-.en_US
dc.identifier.urihttp://hdl.handle.net/10220/43873
dc.description.abstractMicrocavity exciton polaritons are promising candidates to build a new generation of highly nonlinear and integrated optoelectronic devices. Such devices range from novel coherent light emitters to reconfigurable potential landscapes for electro-optical polariton-lattice based quantum simulators as well as building blocks of optical logic architectures. Especially for the latter, the strongly interacting nature of the light-matter hybrid particles has been used to facilitate fast and efficient switching of light by light, something which is very hard to achieve with weakly interacting photons. We demonstrate here that polariton transistor switches can be fully integrated in electro-optical schemes by implementing a one-dimensional polariton channel which is operated by an electrical gate rather than by a control laser beam. The operation of the device, which is the polariton equivalent to a field-effect transistor, relies on combining electro-optical potential landscape engineering with local exciton ionization to control the scattering dynamics underneath the gate. We furthermore demonstrate that our device has a region of negative differential resistance and features a completely new way to create bistable behavior.en_US
dc.description.sponsorshipMOE (Min. of Education, S’pore)en_US
dc.format.extent9 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesScientific Reportsen_US
dc.rights© 2017 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en_US
dc.subjectOptics and photonicsen_US
dc.subjectSemiconductorsen_US
dc.titlePrototype of a bistable polariton field-effect transistor switchen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doihttp://dx.doi.org/10.1038/s41598-017-05277-1
dc.description.versionPublished versionen_US


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