Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/86322
Title: Interfacial Engineering for Quantum-Dot-Sensitized Solar Cells
Authors: Shen, Chao
Fichou, Denis
Wang, Qing
Keywords: Nanostructures
Quantum Dots
Issue Date: 2016
Source: Shen, C., Fichou, D., & Wang, Q. (2016). Interfacial Engineering for Quantum-Dot-Sensitized Solar Cells. Chemistry - An Asian Journal, 11(8), 1183-1193.
Series/Report no.: Chemistry - An Asian Journal
Abstract: Quantum-dot-sensitized solar cells (QDSCs) are promising solar-energy-conversion devices, as low-cost alternatives to the prevailing photovoltaic technologies. Compared with molecular dyes, nanocrystalline quantum dot (QD) light absorbers exhibit higher molar extinction coefficients and a tunable photoresponse. However, the power-conversion efficiencies (PCEs) of QDSCs are generally below 9.5 %, far behind their molecular sensitizer counterparts (up to 13 %). These low PCEs have been attributed to a large free-energy loss during sensitizer regeneration, energy loss during the charge-carrier transport and transfer processes, and inefficient charge separation at the QD/electrolyte interfaces, and various interfacial engineering strategies for enhancing the PCE and cell stability have been reported. Herein, we review recent progress in the interfacial engineering of QDSCs and discuss future prospects for the development of highly efficient and stable QDSCs.
URI: https://hdl.handle.net/10356/86322
http://hdl.handle.net/10220/44013
ISSN: 1861-4728
DOI: http://dx.doi.org/10.1002/asia.201600034
Rights: © 2016 Wiley-VCH Verlag GmbH &Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.