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Title: Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
Authors: Lai, Donny
Tan, Yew Heng
Gunawan, Oki
He, Lining
Tan, Chuan Seng
Keywords: Epitaxy
Solar cells
Issue Date: 2011
Source: Lai, D., Tan, Y. H., Gunawan, O., He, L., & Tan, C. S. (2011). Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy. Applied Physics Letters, 99(1), 011102-.
Series/Report no.: Applied Physics Letters
Abstract: We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter grown at 700 °C, in the absence of surface texturization, antireflective coating, and back surface field enhancement, without considering front contact shading. Secondary ion mass spectroscopy revealed that lower temperature silicon epitaxy yields a more abrupt p-n junction, suggesting potential applications for radial p-n junction wire array solar cells.
ISSN: 0003-6951
DOI: 10.1063/1.3607303
Rights: © 2011 American Institute of Physics (AIP). This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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