dc.contributor.authorEmani, Naresh Kumar
dc.contributor.authorKhaidarov, Egor
dc.contributor.authorPaniagua-Domínguez, Ramón
dc.contributor.authorFu, Yuan Hsing
dc.contributor.authorValuckas, Vytautas
dc.contributor.authorLu, Shunpeng
dc.contributor.authorZhang, Xueliang
dc.contributor.authorTan, Swee Tiam
dc.contributor.authorDemir, Hilmi Volkan
dc.contributor.authorKuznetsov, Arseniy I.
dc.date.accessioned2017-12-21T02:46:02Z
dc.date.available2017-12-21T02:46:02Z
dc.date.issued2017
dc.identifier.citationEmani, N. K., Khaidarov, E., Paniagua-Domínguez, R., Fu, Y. H., Valuckas, V., Lu, S., et al. (2017). High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths. Applied Physics Letters, 111(22), 221101-.en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10220/44180
dc.description.abstractThe dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient visible-light operation is key to integrating atomic quantum systems for future quantum computing. Gallium nitride (GaN), a III-V semiconductor which is highly transparent at visible wavelengths, is a promising material choice for active, nonlinear, and quantum nanophotonic applications. Here, we present the design and experimental realization of high efficiency beam deflecting and polarization beam splitting metasurfaces consisting of GaN nanostructures etched on the GaN epitaxial substrate itself. We demonstrate a polarization insensitive beam deflecting metasurface with 64% and 90% absolute and relative efficiencies. Further, a polarization beam splitter with an extinction ratio of 8.6/1 (6.2/1) and a transmission of 73% (67%) for p-polarization (s-polarization) is implemented to demonstrate the broad functionality that can be realized on this platform. The metasurfaces in our work exhibit a broadband response in the blue wavelength range of 430–470 nm. This nanophotonic platform of GaN shows the way to off- and on-chip nonlinear and quantum photonic devices working efficiently at blue emission wavelengths common to many atomic quantum emitters such as Ca+ and Sr+ ions.en_US
dc.description.sponsorshipASTAR (Agency for Sci., Tech. and Research, S’pore)en_US
dc.format.extent5 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied Physics Lettersen_US
dc.rights© 2017 AIP Publishing. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing. The published version is available at:[https://doi.org/10.1063/1.5007007]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectDielectricsen_US
dc.subjectNano Opticsen_US
dc.titleHigh-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengthsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.5007007
dc.description.versionPublished versionen_US
dc.contributor.organizationLuminous! Center of Excellence for Semiconductor Lighting and Displaysen_US
dc.contributor.organizationThe Photonics Instituteen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record