Characterisation of defects generated during constant current InGaN-on-silicon LED operation
Made, Riko I
Syaranamual, G. J.
Sasangka, W. A.
Nguyen, Xuan Sang
Tay, Yee Yan
Herrin, Jason Scott
Thompson, C. V.
Gan, Chee Lip
Date of Issue2017
School of Materials Science and Engineering
Facility for Analysis, Characterisation, Testing and Simulation
We studied the degradation of MOCVD-grown InGaN LEDs on Si substrates under constant current stressing. Characterisations using Deep Level Transient Spectroscopy and Electron Energy Loss Spectroscopy on active areas showed that the stressing had generated defects that have trap states at 0.26 eV below the conduction band edge (Ec – 0.26 eV) and that correlated with the active area's lower nitrogen content as compared to unstressed samples. The combination of Current-Voltage, Electroluminescence, Cathodoluminescence, and device simulations indicate that an increase in the density of these defects is correlated with an increase in the non-radiative carrier recombination that causes degradation in light emission. Preventing formation of these defects will be critical for improving InGaN-on-silicon LED reliability.
© 2017 Elsevier Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Microelectronics Reliability, Elsevier Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.microrel.2017.07.072].