Please use this identifier to cite or link to this item:
|Title:||Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation||Authors:||Sasangka, W. A.
Syaranamual, G. J.
Made, Riko I
Gan, Chee Lip
Thompson, C. V.
|Keywords:||AlGaN/GaN High Electron Mobility Transistors
|Issue Date:||2017||Source:||Sasangka, W. A., Syaranamual, G. J., Gao, Y., Made, R. I, Gan, C. L., & Thompson, C. V. (2017). Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation. Microelectronics Reliability, 76-77, 287-291.||Series/Report no.:||Microelectronics Reliability||Abstract:||We have systematically studied the effects of SixN1 − x passivation density on the reliability of AlGaN/GaN high electron mobility transistors. Upon stressing, devices degrade in two stages, fast-mode degradation and followed by slow-mode degradation. Both degradations can be explained as different stages of pit formation at the gate-edge. Fast-mode degradation is caused by pre-existing oxygen at the SixN1 − x/AlGaN interface. It is not significantly affected by the SixN1 − x density. On the other hand, slow-mode degradation is associated with SixN1 − x degradation. SixN1 − x degrades through electric-field induced oxidation in discrete locations along the gate-edges. The size of these degraded locations ranged from 100 to 300 nm from the gate edge. There are about 16 degraded locations per 100 μm gate-width. In each degraded location, low density nano-globes are formed within the SixN1 − x. Because of the low density of the degraded locations, oxygen can diffuse through these areas and oxidize the AlGaN/GaN to form pits. This slow-mode degradation can be minimized by using high density (ρ = 2.48 g/cm3) Si36N64 as the passivation layer. For slow-mode degradation, the median time to failure of devices with high density passivation is found to increase up to 2× as compared to the low density (ρ = 2.25 g/cm3) Si43N57 passivation. A model based on Johnson-Mehl-Avrami theory is proposed to explain the kinetics of pit formation.||URI:||https://hdl.handle.net/10356/86854
|ISSN:||0026-2714||DOI:||http://dx.doi.org/10.1016/j.microrel.2017.06.057||Rights:||© 2017 Elsevier Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Microelectronics Reliability, Elsevier Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.microrel.2017.06.057].||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Journal Articles|
Files in This Item:
|Improved reliability of AlGaNGaN-on-Si high electron mobility transistors (HEMTs).pdf||1.48 MB||Adobe PDF|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.