dc.contributor.authorZhang, Xi
dc.contributor.authorZhou, Yong
dc.contributor.authorGong, Yinyan
dc.contributor.authorHuang, Yongli
dc.contributor.authorSun, Changqing
dc.date.accessioned2018-02-12T08:06:12Z
dc.date.available2018-02-12T08:06:12Z
dc.date.issued2017
dc.identifier.citationZhang, X., Zhou, Y., Gong, Y., Huang, Y., & Sun, C. (2017). Resolving H(Cl, Br, I) capabilities of transforming solution hydrogen-bond and surface-stress. Chemical Physics Letters, 678, 233-240.en_US
dc.identifier.issn0009-2614en_US
dc.identifier.urihttp://hdl.handle.net/10220/44437
dc.description.abstractA combination of differential phonon spectrometrics (DPS) and DFT calculations verified the essentiality of H+ ↔ H+ point fragilization and X− polarization dictating the surface stress of HX (X = Cl, Br, I) solutions. H+ ↔ H+ repulsion breaks the network regularly; X− polarization shortens and stiffens the HO bonds but lengthens and softens the O:H nonbonds in its hydration shell. The X− capability of hydrogen bond and surface stress transformation follows the order of I > Br > Cl. Observations provide fresh insight into the acid solvation network dynamics. DPS resolves solute capabilities of transforming the bonds and surface stress.en_US
dc.format.extent19 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesChemical Physics Lettersen_US
dc.rights© 2017 Elsevier B.V. This is the author created version of a work that has been peer reviewed and accepted for publication by Chemical Physics Letters, Elsevier B.V. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.cplett.2017.04.060].en_US
dc.subjectAcid Solutionen_US
dc.subjectSurface Stressen_US
dc.titleResolving H(Cl, Br, I) capabilities of transforming solution hydrogen-bond and surface-stressen_US
dc.typeJournal Article
dc.contributor.researchCentre for Micro-/Nano-electronics (NOVITAS)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1016/j.cplett.2017.04.060
dc.description.versionAccepted versionen_US
dc.contributor.organizationCentre for Micro-/Nano-Electronicsen_US


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