dc.contributor.authorAjaykumar, Arjun
dc.contributor.authorZhou, Xing
dc.contributor.authorChiah, Siau Ben
dc.identifier.citationAjaykumar, A., Zhou, X., & Chiah, S. B. (2017). A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors. IEEE Electron Device Letters, 38(8), 1113-1116.en_US
dc.description.abstractThe operating regime of MOS transistors shifts from collision-dominated drift-diffusion (DD) to less-collision quasi-ballistic(QB) regime. The impact of transport mechanism on the low-frequency noise (LFN) is not well studied for QB devices. Most of the studies rely on the existing theories that were developed for DD-based devices to study LFN even in nanoscale regime. Validity of these models is questionable. In this letter, we extend the conventional carrier-number and correlated-mobility fluctuation model to the QB regime. The model is in accordance with the “apparent mean free path” (λapp) model, which predicts scattering limited noise mechanism in the QB regime. The model is validated with LFN measurement data for III-V QB devices, and shows good agreement with the expected behavior.en_US
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en_US
dc.relation.ispartofseriesIEEE Electron Device Lettersen_US
dc.rights© 2017 IEEE.en_US
dc.subjectApparent Mean Free Pathen_US
dc.subjectApparent Mobilityen_US
dc.titleA New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistorsen_US
dc.typeJournal Article
dc.contributor.researchNanoelectronics Center of Excellenceen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.organizationNanoelectronics Center of Excellenceen_US

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