Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/88219
Title: Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs
Authors: Ajaykumar, Arjun
Zhou, Xing
Chiah, Siau Beh
Syamal, Binit
Keywords: Carrier Number Fluctuation
Hooge Mobility Fluctuation
Issue Date: 2017
Source: Ajaykumar, A., Zhou, X., Chiah, S. B., & Syamal, B. (2017). Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs. IEEE Transactions on Electron Devices, 64(4), 1702-1707.
Series/Report no.: IEEE Transactions on Electron Devices
Abstract: Low-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based noise formulation needs modification in the subthreshold regime. Based on the new formulation, many published results may require reinterpretation. The new formulation is validated with data extracted from the literature for III-V, nanowire, and high-K gate-stack-based devices.
URI: https://hdl.handle.net/10356/88219
http://hdl.handle.net/10220/44615
ISSN: 0018-9383
DOI: 10.1109/TED.2017.2670615
Rights: © 2017 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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