Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/88343
Title: Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser
Authors: Li, Xiang
Wang, Hong
Qiao, Zhongliang
Guo, Xin
Wang, Wanjun
Ng, Geok Ing
Liu, Chongyang
Keywords: Semiconductor Lasers
Mode-locked Lasers
Issue Date: 2018
Source: Li, X., Wang, H., Qiao, Z., Guo, X., Wang, W., Ng, G. I., et al. (2018, March). Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser. Paper presented at High-Brightness Sources and Light-driven Interactions Congress 2018, Strasbourg, France. Optical Society of America.
Series/Report no.: 
Abstract: Mode locking is achieved in a 2 μm GaSb-based laser up to 60 °C. The laser has a T0 of ~82 K at room temperature, and the absorber bias voltage has little effect on T0.
URI: https://hdl.handle.net/10356/88343
http://hdl.handle.net/10220/44689
DOI: http://dx.doi.org/10.1364/MICS.2018.MT1C.5
Rights: © 2018 The author(s) and Optical Society of America (OSA). This paper was presented in High-Brightness Sources and Light-driven Interactions Congress 2018 and is made available as an electronic reprint (preprint) with permission of the author(s) and OSA. The published version is available at: [http://dx.doi.org/10.1364/MICS.2018.MT1C.5]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers
TL Journal Articles

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