Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser
Ng, Geok Ing
Date of Issue2018
High-Brightness Sources and Light-driven Interactions Congress 2018
School of Electrical and Electronic Engineering
Nanoelectronics Centre of Excellence
Mode locking is achieved in a 2 μm GaSb-based laser up to 60 °C. The laser has a T0 of ~82 K at room temperature, and the absorber bias voltage has little effect on T0.
© 2018 The author(s) and Optical Society of America (OSA). This paper was presented in High-Brightness Sources and Light-driven Interactions Congress 2018 and is made available as an electronic reprint (preprint) with permission of the author(s) and OSA. The published version is available at: [http://dx.doi.org/10.1364/MICS.2018.MT1C.5]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.