Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/88347
Title: Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser
Authors: Li, Xiang
Wang, Hong
Qiao, Zhongliang
Guo, Xin
Wang, Wanjun
Ng, Geok Ing
Liu, Chongyang
Keywords: Semiconductor Lasers
Mode-locked Lasers
Issue Date: 2018
Source: Li, X., Wang, H., Qiao, Z., Guo, X., Wang, W., Ng, G. I., et al. (2018, March). Temperature- and current-dependent repetition frequency of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser. Paper presented at High-Brightness Sources and Light-driven Interactions Congress 2018, Strasbourg, France. Optical Society of America.
Abstract: Mode locking is achieved in a 2 μm monolithic GaSb-based laser. The repetition frequency of the laser, as a function of temperature and injection current, is investigated. The reasons for the frequency tuning are discussed.
URI: https://hdl.handle.net/10356/88347
http://hdl.handle.net/10220/44690
DOI: 10.1364/MICS.2018.MT1C.4
Rights: © 2018 The author(s) and Optical Society of America (OSA). This paper was presented in High-Brightness Sources and Light-driven Interactions Congress 2018 and is made available as an electronic reprint (preprint) with permission of the author(s) and OSA. The published version is available at: [http://dx.doi.org/10.1364/MICS.2018.MT1C.4]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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