dc.contributor.authorShangguan, Wang Zuo
dc.contributor.authorAu Yeung, Tin Cheung
dc.contributor.authorYu, Ya Bin
dc.contributor.authorKam, Chan Hin
dc.contributor.authorZhao, Xuean
dc.date.accessioned2018-04-26T05:10:07Z
dc.date.available2018-04-26T05:10:07Z
dc.date.issued2002
dc.identifier.citationShangguan, W. Z., Au Yeung, T. C., Yu, Y. B., Kam, C. H., & Zhao, X. (2002). Admittance of a one-dimensional double-barrier resonant tunneling nanostructure. Physical Review B - Condensed Matter and Materials Physics, 65(23), 235315-.en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://hdl.handle.net/10220/44724
dc.description.abstractWe study the dynamic response of a one-dimensional double-barrier nanostructure to an ac bias. Combining the Schrödinger equation, Poisson equation and the scattering theory, we calculate the internal potential, charge density, and the ac conductance as well. The results show that the charge distribution is antisymmetric with respect to the center of the double barrier, and depends crucially on the relative position of the Fermi level to the resonant energies of the well. The diagonal emittance is found to have a similar dependence. It is negative (inductive behavior) when the Fermi energy is very close to the resonant energies, and it reaches the negative maximum at resonant energies, while it is always positive (capacitive behavior) when the Fermi energy is within the barrier depth and far from resonance, and develops two peaks closely on both sides of the inductive peak. This result is in agreement with that obtained from discrete model. In addition, we find that the capacitive peaks correspond to the maxima of charge-density fluctuation, and inductive peaks to zero charge-density distribution. Therefore, the sign and magnitude of emittance reflect how the charge piles up inside the device.en_US
dc.format.extent8 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesPhysical Review B - Condensed Matter and Materials Physicsen_US
dc.rights© 2002 American Physical Society (APS). This paper was published in Physical Review B - Condensed Matter and Materials Physics and is made available as an electronic reprint (preprint) with permission of American Physical Society (APS). The published version is available at: [doi:http://dx.doi.org/10.1103/PhysRevB.65.235315]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en_US
dc.subjectConductanceen_US
dc.subjectDynamicsen_US
dc.titleAdmittance of a one-dimensional double-barrier resonant tunneling nanostructureen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevB.65.235315
dc.description.versionPublished versionen_US


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