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|Title:||Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs||Authors:||Dutta, Pradipta
Sarkar, C. K.
|Keywords:||Asymmetric Double Gate
|Issue Date:||2017||Source:||Dutta, P., Syamal, B., Koley, K., Dutta, A., & Sarkar, C. K. (2017). Short-channel drain current model for asymmetric heavily / lightly doped DG MOSFETs. Pramana, 89(2), 33-.||Series/Report no.:||Pramana||Abstract:||The paper presents a drain current model for double gate metal oxide semiconductor field effect transistors (DG MOSFETs) based on a new velocity saturation model that accounts for short-channel velocity saturation effect independently in the front and the back gate controlled channels under asymmetric front and back gate bias and oxide thickness. To determine the front and the back-channel velocity saturation, drain-induced barrier lowering is evaluated by effective gate voltages at the front and back gates obtained from surface potential at the threshold condition after considering symmetric and asymmetric front and back oxide thickness. The model also incorporates surface roughness scattering and ionized impurity scattering to estimate drain current for heavily / lightly doped channel for short-channel asymmetric DG MOSFET and a good agreement has been achieved with TCAD simulations, with a relative error of around 3–7%.||URI:||https://hdl.handle.net/10356/89322
|ISSN:||0304-4289||DOI:||http://dx.doi.org/10.1007/s12043-017-1430-z||Rights:||© 2017 Indian Academy of Sciences. This paper was published in Pramana and is made available as an electronic reprint (preprint) with permission of Indian Academy of Sciences. The published version is available at: [http://dx.doi.org/10.1007/s12043-017-1430-z]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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