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Title: Low-threshold optically pumped lasing in highly strained germanium nanowires
Authors: Bao, Shuyu
Kim, Daeik
Onwukaeme, Chibuzo
Gupta, Shashank
Saraswat, Krishna
Lee, Kwang Hong
Kim, Yeji
Min, Dabin
Jung, Yongduck
Qiu, Haodong
Wang, Hong
Fitzgerald, Eugene A.
Tan, Chuan Seng
Nam, Donguk
Keywords: Nanoparticle
Transmission Electron Microscopy
Issue Date: 2017
Source: Bao, S., Kim, D., Onwukaeme, C., Gupta, S., Saraswat, K., Lee, K. H., et al. (2017). Low-threshold optically pumped lasing in highly strained germanium nanowires. Nature Communications, 8(1), 1845-.
Series/Report no.: Nature Communications
Abstract: The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavourable bandstructures. Highly strained germanium with its fundamentally altered bandstructure has emerged as a potential low-threshold gain medium, but there has yet to be a successful demonstration of lasing from this seemingly promising material system. Here we demonstrate a low-threshold, compact group IV laser that employs a germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium. The amplified material gain in strained germanium can sufficiently overcome optical losses at 83 K, thus allowing the observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm−2. Our demonstration opens new possibilities for group IV lasers for photonic-integrated circuits.
ISSN: 2041-1723
DOI: 10.1038/s41467-017-02026-w
Rights: © 2017 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commonslicense, unless indicated otherwise in a credit line to the material. If material is not included in the article’sCreative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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